PCB ea letsopa

Lisebelisoa tse tloaelehileng li kenyelletsa aluminium oxide (Al₂O₃, bohloeki ba 60%-96%), aluminium nitride (AlN), le beryllium oxide (BeO, e nkeloang sebaka butle-butle ka lebaka la chefo). 96% aluminium oxide e ikarabella bakeng sa ts'ebeliso e fetang 60%.

Al₂O₃ (96%) ke hoo e ka bang 25W/m・K, AlN e fihla ho 170-230W/m・K, mme beryllium oxide (BeO) ke hoo e ka bang 250W/m・K.

Aluminium oxide (6-7 ppm/°C), aluminium nitride (4.5 ppm/°C), e tlase haholo ho feta FR4's 18-22 ppm/°C.

Mochesong oa kamore, khanyetso ea ho thibela ho ruruha ha li-substrate tsa Al₂O₃ ke >10¹⁴Ω, 'me ea li-substrate tsa AlN ke >10¹³Ω.

Phetoho e sa fetoheng ya dielectric ya 96% aluminium oxide e ka ba 9.8 (1MHz), mme ya AlN e ka ba 8.5 (1MHz).

Mocheso o sebetsang: -55℃ ~ 300℃, e ka mamella mocheso o phahameng oa nako e khuts'oane o fetang 800℃.

Bothata ba Mohs ke 6-9, aluminium oxide (96%) e fihla boemong ba 7, ka bothata bo boholo ba ho e lokisa.

Al₂O₃ (96%) ke hoo e ka bang 3.85g/cm³, mme AlN ke hoo e ka bang 3.26g/cm³.

Tahlehelo e tlase ea dielectric (tanδ＜0.002), tieho e nyane ea phetiso ea lets'oao.

Sekhahla sa ho monya metsi

Ts'ebetso ea filimi e teteaneng (khatiso ea skrine), ts'ebetso ea filimi e tšesaane (ho qhala/ho fetoha mouoane), ts'ebetso ea ho thunya hammoho (HTCC/LTCC), jj.

Mocheso oa ho sintering oa HTCC ke 1500-1600℃, LTCC ke 850-900℃; LTCC e ka kopanya likarolo tse sa sebetseng ka litšenyehelo tse phahameng.

Ts'ebetso ea filimi e tšesaane e ka fihlella bophara/sebaka sa mola sa 10μm/10μm, 'me ts'ebetso ea filimi e teteaneng e ka ba 100μm/100μm.

Bophara ba bonyane ba masoba bakeng sa ho tjheka ka laser ke 50μm, mme bakeng sa ho tjheka ka mechini ke 100μm.

Koporo e kopanyang ka ho toba (DBC), tšepe e sebetsang e nang le tšepe e nang le tšepe e ngata (AMB), khatiso ea filimi e teteaneng.

Botenya bo tloaelehileng ba lera la koporo ke 0.1-0.3mm, ho fihlela ho 0.5mm ha boholo bo le teng.

Matla a ho kopanya >25N/mm, linako tsa potoloho ea mocheso li feta makhetlo a 1000 (-40℃ ~ 150℃).

Ts'ebetso ea filimi e tšesaane Ra

Ho seha ka laser, ho seha ka di-cutting, ho seha ka mechine. Ho nepahala ha ho seha ka laser ke ±25μm.

Tlhahiso ea ts'ebetso ea filimi e tšesaane ke hoo e ka bang 85%-90%, 'me ts'ebetso ea filimi e teteaneng ke hoo e ka bang 90%-95%.

Qoba moralo oa sekhutlo se matla, radius ea fillet ≥0.2mm; eketsa masoba a ho qhala mocheso libakeng tse nang le khatello e matla ea mocheso.

Ka ho kopanya li-chip tse peli, ho kopanya terata, ho tjheseletsa ka hare, jj. Ho kopanya li-chip tse peli ho na le khanyetso ea mocheso e ka tlase ho 0.5℃/W.

Liteishene tsa motheo tsa 5G (tahlehelo ea lets'oao

Fokotsa khanyetso ea mocheso. Ho sebelisa li-substrate tsa AlN ho li-module tsa IGBT ho ka fokotsa khanyetso ea mocheso ho 1.5℃/W.

E ka sebelisoa liyuniti tsa taolo ea enjene (ECU), tse nang le khanyetso e ntle ea mocheso o phahameng le khanyetso ea ho thothomela.

Lisebelisoa tsa ho qhala mocheso tsa LED tse matla haholo, tse nang le khanyetso ea mocheso e fokotsoang ho fihlela ka tlase ho 3℃/W.

Bakeng sa foil ea koporo ea 1oz tlas'a ho phahama ha mocheso oa 10℃, bophara ba mola oa 1mm bo ka jara hoo e ka bang 2A.

Ha e kopantsoe ka har'a lits'ebetso tsa ho thunya hammoho, LTCC e ka fihlella mekhahlelo e fetang 100 bonyane.

Matla a ho kokobela a Al₂O₃ (96%) >300MPa, le a AlN >350MPa.

Ho hanyetsa mahlaseli (ho ka mamella tekanyo ea 10⁶Gy), e bobebe (botenya ba hoo e ka bang 1/3 ea li-substrate tsa tšepe).

Teko ea potoloho ea mocheso (-40℃ ~ 125℃, makhetlo a 1000), teko ea mocheso o mongobo (85℃/85% RH, 1000h).

Ho petsoha ha lera la metallization (Al₂O₃ DBC substrate disappear makhetlo a ka bang 500-800).

Botenya ba 1mm bo ka mamella ≥5kV, motlakase oa ho qala ho ntša metsi ka karolo e itseng >2kV.

Teko ea ho petsoha ha theipi (theipi ea 3M 610), ha ho na karohano ea lera la tšepe.

Tlas'a maemo a tloaelehileng a mosebetsi, e ka fihla ho feta lilemo tse 10, 'me libakeng tse nang le mocheso o phahameng le mongobo o phahameng, e khutsufatsoa ho ba lilemo tse 5.

Ho lemoha X-ray, microscope ea ultrasound scanning (C-SAM), ka qeto ea ho fihla ho 10μm.

Ho thothomela ha sinusoidal 5-2000Hz, ho potlakisa 5g, ho nka dihora tse 2 ntle le mapetso.

Teko ea spray ea letsoai ea lihora tse 96 (tharollo ea 5% ea NaCl), ha ho na ho bola ha lera la metallization.

Mohlala oa 'mele oa motho (HBM) >2kV, mohlala oa mochini (MM) >200V.

-40℃ ~ 150℃, nako ea phetoho

Litšenyehelo tsa li-substrate tsa letsopa li feta FR4 ka makhetlo a 5-10, haholo-holo ka lebaka la thepa le lits'ebetso tse rarahaneng.

Tlhahiso e kgolo, ntlafatso ya tshebetso (jwalo ka ho sebedisa filimi e teteaneng ho ena le filimi e tshesane), ho kgetha thepa e theko e tlase (jwalo ka 60% aluminium oxide).

Tshebetso e betere ya ho kenya mocheso (di-substrate tsa tshepe di hloka dikarolo tsa ho kenya mocheso), mme coefficient ya katoloso ya mocheso e tsamaellana le di-chip.

Aluminium oxide (60%)

Mofuta oa thepa, ho rarahana ha ts'ebetso, palo ea mekhahlelo, boholo, bongata ba tatellano.

E ka finyelloa ka mokhoa o tsitsitseng, ka keketseho ea litšenyehelo ea 20%-30%.

E ikarabella bakeng sa hoo e ka bang 15%-20% ea litšenyehelo tsohle, 'me ntlafatso ea chai e ka e fokotsa haholo.

Ha bongata ba odara bo feta likotoana tse 5,000, litšenyehelo tsa yuniti li fokotseha haholo.

Potoloho e telele ea nts'etsopele (likhoeli tse 3-6), litšenyehelo tse phahameng tsa hlobo (hoo e ka bang li-yuan tse 50,000-100,000).

Tshebetso ya ho qhala mocheso ya di-substrate tsa AlN e feta ka makgetlo a 3 ya di-PCB tse thehilweng ho aluminium, empa theko e phahame ka makgetlo a 4.

E tsitsitsoe ka dikurufu kapa e tlameletsoe ka sekhomaretsi se tsamaisang mocheso (kganyetso ya mocheso

Mocheso o phahameng oa ho kopanya hape: 240-260℃, nako e ka tlase ho metsotsoana e 60.

E ka sebelisoa hape, empa mocheso o phahameng o ka baka ho petsoha ha letsopa ka sekhahla sa katleho sa hoo e ka bang 70%.

Hloekisa ka ho hlwekisa ka ultrasonic ka IPA (isopropyl alcohol) ka metsotso e ka tlase ho 10.

Boloka mongobo tikolohong ea ts'ebetso ho 40%-60% 'me u apare li-wristband tse thibelang ho sisinyeha.

Khetha thepa e nang le di-coefficient tse tshwanang tsa katoloso ya mocheso mme o tlatse dikgeo ka grease ya silicone e tsamaisang mocheso.

Ha ho kgothaletswe, kaha kgatello ya mocheso e ka baka ho petsoha ha letsopa.

Torque bakeng sa dikurufu tsa M3: 0.8-1.2N・m ho qoba ho tsepamisa maikutlo kgatellong.

Lemoha libaka tse chesang ka ho nka litšoantšo tsa mocheso oa infrared 'me u hlahlobe khokahano ka ho etsa liteko tsa khanyetso.

Polokelo: mongobo o ka tlase ho 30% RH, mocheso o ka bang 20-25℃, qoba ho tshwarwa ke mechine.

IPC-6012 (Tlhaloso ea Tshebetso bakeng sa Liboto tse Hatisitsoeng ka Tieo), MIL-P-55110 (Tekanyetso ea Sesole).

Setifikeiti sa UL (se thibelang malakabe), setifikeiti sa RoHS (ha se na lithethefatsi tse kotsi), ISO 9001.

Finyella liteko tsa tikoloho tsa MIL-STD-810G tse nang le litlhoko tse thata tsa ho thothomela le ho hanyetsa tšusumetso.

E hloka setifikeiti sa AEC-Q100 (di-chip) le AEC-Q200 (dikarolo tse sa sebetseng).

Latela melao ea EU REACH, e thibelang tšebeliso ea lintho tse kotsi tse kang loto le cadmium.

Tekanyetso ea UL 94 V-0 (ha ho na ho ata ha lelakabe), index ea oksijene >30%.

Latela tsamaiso ea taolo ea boleng ba lisebelisoa tsa bongaka ea ISO 13485.

E hloka setifikeiti sa tsamaiso ea boleng ba sefofane sa AS9100.

Latela maemo a EN 55032 a mahlaseli a motlakase, mesi e hlahisoang ke

Mekhatlo ea setifikeiti ea mokha oa boraro: SGS, TÜV, Intertek.

Hlahloba mokhoa oa ho kopanya (mohlala, oxidation ea foil ea koporo ea DBC) 'me u sebetse hape bokaholimo.

Tlatsa mapetsong a manyane ka resin ea epoxy; nkela substrate sebaka bakeng sa mapetsong a maholo.

Fetola boemo ba mocheso oa ho kopanya le ts'ebetso ea taolo ea phallo (sehlopha sa RA).

Ntlafatsa marang-rang, sebelisa thepa e sa fetoheng ea dielectric e tlase, 'me u kenye likarolo tsa fatše.

Hlahloba litsela tsa ho tsamaisa mocheso 'me u leke ho hanyetsa mocheso (sepheo

Ts'ebetso e sa lekanang ea ho sila kapa phomolo e sa lekaneng ea khatello ea mocheso; ntlafatsa ts'ebetso ea tlhahiso.

Hloekisa ka plasma ho tlosa masalla a lintho tse phelang.

Teko ea ho hanyetsa ho kenella ha mocheso (1000V DC) ho fumana lintlha tsa ho dutla.

Matlafatsa masela a sireletsang (mohlala, ho penta ka nickel-gold) mme o qobe dikhase tse senyang.

Eketsa botenya ba substrate (≥0.5mm) mme o ntlafatse moralo wa sekhutlo.

Ho setafatsa (

Silicon nitride (Si₃N₄), e nang le conductivity e phahameng ea mocheso (100W/m・K) le matla.

Khatiso ea 3D ea letsopa e entse meralo e rarahaneng ea ho qhala mocheso ka ho nepahala ha 50μm.

Ntlafatsa kabo ea mocheso ka li-algorithms tsa ketsiso, u khutsufatse potoloho ea moralo ka 30%.

E sebelisoa li-module tsa matla tsa SiC ka sekhahla sa kholo ea 'maraka sa selemo le selemo se fetang 20%.

Tahlehelo e tlase ea dielectric e fihlela litlhoko tsa puisano tse sebelisoang khafetsa, 'me tlhoko e lebelletsoe ho hola ka 50% ka 2025.

Li-pesta tse teteaneng tse thehiloeng metsing li nkela li-solvent tsa tlhaho sebaka ho fokotsa mesi ea VOC.

Bothata ba ho bapisa di-coefficient tsa katoloso ya mocheso, ho hloka thepa ya lera la buffer.

Lithography ea EUV e fihlella lipotoloho tsa boemo ba 10nm, tse leng mohatong oa laboratori hona joale.

Ho tsitsa ho hoholo mochesong o tlase ho ka etsa hore e be bajari ba li-chip tsa quantum.

Khanyetso e phahameng ka ho fetisisa ea mocheso: 800℃, e hlokang thepa ea metallization ea mocheso o phahameng (mohlala, mokhoa oa molybdenum-manganese).

E mamella khatello ea 100MPa 'me u fumane tšireletso ea IP68 ka ho e kenya ka pitseng.

Sebelisa liseramike tse hanelang mahlaseli (mohlala, silicon carbide) ho sireletsa mahlaseli a neutron.

Laola impedance ea tšobotsi (50Ω) 'me u fokotse tahlehelo ea dielectric (tanδ

Amohela meaho ea ho qhala mocheso ea kanale e nyane e nang le bongata ba phallo ea mocheso ho fihlela ho 100W/cm².

Ho hlokahala ho passivation holim'a metsi, ho latela liteko tsa baeloji tsa ISO 10993.

Ho hanyetsa mocheso o phahameng le ho kenya mocheso o phahameng, ho ntlafatsa katleho ea sistimi ka 1%-2%.

Finyella litlhoko tsa ho kenya motlakase tse nang le motlakase o phahameng oa DC (HVDC), motlakase o mamella ≥10kV.

Sebelisa li-bracket tse monyang litšisinyeho 'me u qobe maqhubu a ka ntle a ho hlohlelletsa bakeng sa maqhubu a tlhaho.

Kopanya le di-chip tsa MEMS ho fihlella ho ba bonolo le moralo o nang le matla a tlase